production specification pnp general purpose transistor mmbt589 c118 www.gmicroelec.com rev.b 1 features z epitaxial planar die construction. z also available in lead free version. applications z high current surface mount pn p silicon switching transistor for load management in portable appilications. sot-23 ordering information type no. marking package code mmbt589 589 sot-23 maximum rating @ ta=25 unless otherwise specified symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current (dc) -1.0 a i cm collector current-peak -2.0 a p c collector dissipation 0.31 w r ja thermal resistance, junction to ambient 403 c/w t j ,t stg junction and storage temperature -55 to +150 c pb lead-free
production specification pnp general purpose transistor mmbt589 c118 www.gmicroelec.com rev.b 2 electrical characteristics @ ta=25 unless otherwise specified symbol parameter test conditions min. max. unit v (br)cbo collector-base breakdown voltage i c =-100 a,i e =0 -50 v v (br)ceo collector-emitter breakdown voltage i c =-10ma,i b =0 -30 v v (br)ebo emitter-base breakdown voltage i e =-100 a,i c =0 -5 v i cbo collector cut-off current i e = 0; v cb = -30v - -0.1 a i ces collector-emitter cutoff current v ces =-30v - -0.1 a i ebo emitter cut-off current i c = 0; v eb = -4v - -0.1 a h fe dc current gain v ce = -2v; i c = -1ma v ce = -2v;i c = -500ma v ce = -2v;i c = -1.0a v ce = -2v;i c = -2.0a 100 100 80 40 - 300 - - v ce(sat) collector-emitter saturation voltage i c = -0.5a; i b = -0.05a i c = -1.0a; i b = -0.1a i c = -2.0a; i b = -0.2a - - - -0.25 -0.30 -0.65 v v be(sat) base-emitter saturation voltage i c = -1.0a; i b = -0.1a - -1.2 v v be(on) base-emitter turn-on voltage i c =-1.0a,v ce =-2.0v - -1.1 v f t transition frequency i c = -100ma; v ce = -5v; f = 100mhz 100 - mhz c obo output capacitance f=1.0mhz - 15 pf typical characteristics @ ta=25 unless otherwise specified
production specification pnp general purpose transistor mmbt589 c118 www.gmicroelec.com rev.b 3
production specification pnp general purpose transistor mmbt589 c118 www.gmicroelec.com rev.b 4 package outline plastic surface mounted package sot-23 soldering footprint unit : mm package information sot-23 dim min max a 2.70 3.10 b 1.10 1.50 c 1.0 typical d 0.4 typical e 0.35 0.48 g 1.80 2.00 h 0.02 0.1 j 0.1 typical k 2.20 2.60 all dimensions in mm device package shipping mmbt589 sot-23 3000/tape&reel a b c d e j h k g 0.90 0.80 2.00 0.95 0.95
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